Kinetics of Te doping in disodering GaInP grown by organometallic vapor phase epitaxy
Identifieur interne : 00FB29 ( Main/Repository ); précédent : 00FB28; suivant : 00FB30Kinetics of Te doping in disodering GaInP grown by organometallic vapor phase epitaxy
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Abstract
Te-doped GaInP epitaxial layers were grown by organometallic vapor phase epitaxy in an effort to clarify the Te disordering mechanism. CuPt ordered GaInP is produced under normal growth conditions. The addition of Te has been reported to induce disorder. One suggested mechanism for disordering GaInP is the increased step velocity caused by the addition of Te. To test this hypothesis, the effects of growth rate and growth temperature on the disordering effect of Te were studied. The Te/III ratio in the vapor and the partial pressure of the P precursor, tertiarybutylphosphine, were kept constant. The behavior of Te incorporation is found to be unusual. The decrease with increasing temperature is consistent with Te acting as a volatile impurity. However, the Te incorporation is also found to be inversely proportional to the growth rate, a characteristic of nonvolatile dopants. A suggested solution to this apparent contradiction is that the Te, which accumulates at step edges, is not able to keep pace with the steps when they move at the higher velocities. As the growth rate was decreased, with a corresponding decrease in measured step velocity, the degree of order was observed to increase, in support of this kinetic model. GaInP layers grown at higher temperatures were observed to become much less ordered. Analysis of these data indicates that the effect is due mainly to the effect of temperature on step velocity. The direct correlation between the step velocity and the degree of order, as these two growth parameters were varied, confirms that Te disorders GaInP for kinetic reasons. © 2001 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Kinetics of Te doping in disodering GaInP grown by organometallic vapor phase epitaxy</title><author><name sortKey="Jun, S W" uniqKey="Jun S">S. W. Jun</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City, Utah 84108</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Stringfellow, G B" uniqKey="Stringfellow G">G. B. Stringfellow</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City, Utah 84108</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Howard, A D" uniqKey="Howard A">A. D. Howard</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City, Utah 84108</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Fetzer, C M" uniqKey="Fetzer C">C. M. Fetzer</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City, Utah 84108</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Shurtleff, J K" uniqKey="Shurtleff J">J. K. Shurtleff</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City, Utah 84108</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0489268</idno><date when="2001-12-15">2001-12-15</date><idno type="stanalyst">PASCAL 01-0489268 AIP</idno><idno type="RBID">Pascal:01-0489268</idno><idno type="wicri:Area/Main/Corpus">010333</idno><idno type="wicri:Area/Main/Repository">00FB29</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>MOCVD</term><term>Semiconductor doping</term><term>Semiconductor epitaxial layers</term><term>Semiconductor growth</term><term>Tellurium</term><term>VPE</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8105E</term><term>8115K</term><term>6172V</term><term>8115G</term><term>Etude expérimentale</term><term>Couche épitaxique semiconductrice</term><term>Gallium composé</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Dopage semiconducteur</term><term>Tellure</term><term>Méthode MOCVD</term><term>Epitaxie phase vapeur</term><term>Croissance semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Te-doped GaInP epitaxial layers were grown by organometallic vapor phase epitaxy in an effort to clarify the Te disordering mechanism. CuPt ordered GaInP is produced under normal growth conditions. The addition of Te has been reported to induce disorder. One suggested mechanism for disordering GaInP is the increased step velocity caused by the addition of Te. To test this hypothesis, the effects of growth rate and growth temperature on the disordering effect of Te were studied. The Te/III ratio in the vapor and the partial pressure of the P precursor, tertiarybutylphosphine, were kept constant. The behavior of Te incorporation is found to be unusual. The decrease with increasing temperature is consistent with Te acting as a volatile impurity. However, the Te incorporation is also found to be inversely proportional to the growth rate, a characteristic of nonvolatile dopants. A suggested solution to this apparent contradiction is that the Te, which accumulates at step edges, is not able to keep pace with the steps when they move at the higher velocities. As the growth rate was decreased, with a corresponding decrease in measured step velocity, the degree of order was observed to increase, in support of this kinetic model. GaInP layers grown at higher temperatures were observed to become much less ordered. Analysis of these data indicates that the effect is due mainly to the effect of temperature on step velocity. The direct correlation between the step velocity and the degree of order, as these two growth parameters were varied, confirms that Te disorders GaInP for kinetic reasons. © 2001 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>90</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Kinetics of Te doping in disodering GaInP grown by organometallic vapor phase epitaxy</s1></fA08><fA11 i1="01" i2="1"><s1>JUN (S. W.)</s1></fA11><fA11 i1="02" i2="1"><s1>STRINGFELLOW (G. B.)</s1></fA11><fA11 i1="03" i2="1"><s1>HOWARD (A. D.)</s1></fA11><fA11 i1="04" i2="1"><s1>FETZER (C. M.)</s1></fA11><fA11 i1="05" i2="1"><s1>SHURTLEFF (J. K.)</s1></fA11><fA14 i1="01"><s1>Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City, Utah 84108</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>6048-6053</s1></fA20><fA21><s1>2001-12-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0489268</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Te-doped GaInP epitaxial layers were grown by organometallic vapor phase epitaxy in an effort to clarify the Te disordering mechanism. CuPt ordered GaInP is produced under normal growth conditions. The addition of Te has been reported to induce disorder. One suggested mechanism for disordering GaInP is the increased step velocity caused by the addition of Te. To test this hypothesis, the effects of growth rate and growth temperature on the disordering effect of Te were studied. The Te/III ratio in the vapor and the partial pressure of the P precursor, tertiarybutylphosphine, were kept constant. The behavior of Te incorporation is found to be unusual. The decrease with increasing temperature is consistent with Te acting as a volatile impurity. However, the Te incorporation is also found to be inversely proportional to the growth rate, a characteristic of nonvolatile dopants. A suggested solution to this apparent contradiction is that the Te, which accumulates at step edges, is not able to keep pace with the steps when they move at the higher velocities. As the growth rate was decreased, with a corresponding decrease in measured step velocity, the degree of order was observed to increase, in support of this kinetic model. GaInP layers grown at higher temperatures were observed to become much less ordered. Analysis of these data indicates that the effect is due mainly to the effect of temperature on step velocity. 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